PART |
Description |
Maker |
S13003AD-H |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
S13003ADL |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
JANSM2N2904 JANSM2N2905AL 2N2904E3 JANSR2N2904 JAN |
BJT( BiPolar Junction Transistor) PNP Transistor
|
Microsemi
|
MMBT2131T1-D |
General Purpose Transistors PNP Bipolar Junction Transistor (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
|
ON Semiconductor
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
2SA2092TLQ 2SA209211 |
-1A / -60V Bipolar transistor -1A /-60V Bipolar transistor Low switching noise.
|
Rohm
|
CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管 From old datasheet system SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
IRGP4066D-EPBF IRGP4066DPBF IRGP4066DPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications
|
MDE Semiconductor
|
BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|